ee_importDeviceParameters
Parameterize ideal semiconductor block from Hitachi, Infineon, or Wolfspeed XML file
Since R2021b
Syntax
Description
Hitachi Devices
ee_importDeviceParameters(
extracts the parameters from a datasheet in a format Hitachi supports for a diode,
insulated-gate bipolar transistor (IGBT), or metal-oxide-semiconductor field-effect
transistor (MOSFET). This syntax imports the parameters into a Simscape™ block at the specified file
,"hitachi",blockPath
)blockPath
. The XML file must be
on the MATLAB® path. This syntax supports these blocks:
Diode (since R2022a)
MOSFET (Ideal, Switching) (since R2024a)
Half-Bridge (Ideal, Switching) — You parameterize the switching devices, which must be IGBTs or MOSFETs, and the integral protection diodes (since R2024b).
For examples of Hitachi datasheets for IGBT and diode devices, see the Insulated Gate Bipolar Transistor (IGBT) and diode modules with SPT, SPT+, SPT++ and TSPT+ chips page on the Hitachi website.
Infineon Devices
ee_importDeviceParameters(
extracts the parameters from a datasheet in a format that
Infineon® supports for a diode with the switch-on gate resistance value specified by
file
,"infineon",blockPath
,GateResistanceOn=Rgon
)Rgon
. This syntax imports the parameters into a Diode block at the specified blockPath
. The XML
file must be on the MATLAB path (since R2024b).
ee_importDeviceParameters(
extracts the parameters from a datasheet for an IGBT with the switch-on and switch-off
gate resistance values specified by file
,"infineon",blockPath
,GateResistanceOn=Rgon
,GateResistanceOff=Rgoff
)Rgon
and
Rgoff
. This syntax imports the parameters into a Simscape block at the specified blockPath
. The XML file must be
on the MATLAB path. This syntax supports these blocks:
IGBT (Ideal, Switching) (since R2024a)
Half-Bridge (Ideal, Switching) — You parameterize the switching devices, which must be IGBTs, and the integral protection diodes (since R2024b).
For examples of Infineon datasheets for IGBT devices, see the IGBTs – Insulated Gate Bipolar Transistors page on the Infineon website.
Wolfspeed Devices
Since R2025a
ee_importDeviceParameters(
extracts the parameters from a datasheet in a format that Wolfspeed supports for a diode
with the switch-on gate resistance value specified by file
,"wolfspeed",blockPath
,GateResistanceOn=Rgon
)Rgon
. This
syntax imports the parameters into a Diode block at the specified blockPath
. The XML
file must be on the MATLAB path.
Note
The function does not use the value of
Rgon
because Wolfspeed diode XML files presently specify the
reverse recovery energy losses as constant zero. (since R2025a)
ee_importDeviceParameters(
extracts the parameters from a datasheet in a format that Wolfspeed supports for a MOSFET
with the switch-on and switch-off gate resistance values specified by
file
,"wolfspeed",blockPath
,GateResistanceOn=Rgon
,GateResistanceOff=Rgoff
)Rgon
and Rgoff
. This syntax imports the
parameters into a Simscape block at the specified blockPath
. The XML file must be
on the MATLAB path. This syntax supports these blocks:
Half-Bridge (Ideal, Switching) — You parameterize the switching device, which must be MOSFETs, and the integral protection diodes.
For examples of Wolfspeed datasheets, see the LTspice and PLECS Models page on the Wolfspeed website.
Examples
Input Arguments
Tips
Infineon, Hitachi, and Wolfspeed datasheets do not specify values for every parameter of the blocks that this function supports. If the datasheet does not provide a value, the function uses the default block parameter values and appends
% Parameter not set
to the value. If you simulate a model that you parameterize using theee_importDeviceParameters
function and you do not obtain the expected results, tune these parameters to get better agreement with your data.To parameterize an IGBT or MOSFET with a protection diode, model the diode externally. Call the
ee_importDeviceParameters
function twice; once to parameterize an IGBT (Ideal, Switching) or MOSFET (Ideal, Switching) block and once to parameterize a Diode block.To parameterize a half-bridge with protection diodes, model the diodes internally in the Half-Bridge (Ideal, Switching) block. Call the
ee_importDeviceParameters
function once to parameterize the switching devices and the integral protection diodes.Infineon, Hitachi, and Wolfspeed format XML files provide information that you can use to parameterize ideal switching device models with tabulated switching losses and a thermal model. Use the
ee_importDeviceParameters
function when you make these modeling assumptions:Tabulated on-state I-V curve
No charge model
Tabulated switching losses
Foster or Cauer thermal network
If you want to change these modeling assumptions, use a different method to parameterize the block. For more information about modeling assumptions and parameterization methods, see Choose Blocks to Model Semiconductor Devices.
Wolfspeed MOSFET XML files contain negative values in the current and voltage axes for the lookup tables of the 3-D switch-on and switch-off loss. The MOSFET (Ideal, Switching) block does not support negative values for the current axis as it assumes that the switching losses at negative current values are always zero. As a result, this function removes these negative axis values as well as the corresponding switch-on and switch-off energy loss data. The block supports the use of negative voltage axis values but assumes that the switching losses at these voltage values are always zero. (since R2025a)
Wolfspeed MOSFET XML files might specify different temperature (Tj) axis values for the switch-on and switch-off loss lookup tables. As MOSFET (Ideal, Switching) and Half-Bridge (Ideal, Switching) blocks do not support different Tj axis values for these lookup tables, this function performs linear interpolation of the switch-on and switch-off loss lookup tables such that they share the same common Tj axis. (since R2025a)
Wolfspeed XML files for MOSFET, body diode, and standalone diode parts specify parameters for Cauer thermal network. (since R2025a)
Wolfspeed XML files specify a formula that determines the scaling factor of the switch-on and switch-off loss lookup tables that varies with the turn-on and turn-off gate resistances, respectively. (since R2025a)
Wolfspeed XML files for both the body diode of the MOSFET and standalone diode parts currently specify zero reverse recovery losses. (since R2025a)
If the Wolfspeed XML file uses the same gate resistance value for the computation of the switch-on and switch-off losses, the
ee_importDeviceParameters
function uses the values of theGateResistanceOn
andGateResistanceOff
arguments for their computation. (since R2025a)If the Wolfspeed XML file contains on-state voltage lookup (
Von(Tj,I)
) values that do not monotonically increase with the values in the current vector, theee_importDeviceParameters
function removes the column of the on-state voltage drop lookup table that contains the invalid value and the corresponding element of the current vector. (since R2025a)