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반도체
R2026a개별 반도체 소자를 사용하여 전력을 변환하고 정류합니다.
원하는 응용 사례에 맞게 반도체 소자를 모델링하기 위해 사용할 블록을 선택하는 데 도움이 필요하면 반도체 소자를 모델링하기 위한 블록 선택 항목을 참조하십시오.
Simscape 블록
 | Current Limiter | Behavioral model of current limiter |
 | Diode | Piecewise linear, exponential, or tabulated diode |
 | Gate Driver | Behavioral model of gate driver integrated circuit |
 | GTO | Gate Turn-Off Thyristor |
 | Half-Bridge Driver | Behavioral model of half-bridge driver integrated circuit |
 | Half-Bridge (Ideal, Switching) | Half-bridge with ideal switches and thermal port |
 | Ideal Semiconductor Switch | Ideal Semiconductor Switch |
 | IGBT (Ideal, Switching) | Ideal insulated-gate bipolar transistor for switching applications |
 | MOSFET (Ideal, Switching) | Ideal N-channel MOSFET for switching applications |
 | N-Channel IGBT | N-Channel insulated gate bipolar transistor |
 | N-Channel JFET | N-Channel junction field-effect transistor |
 | N-Channel LDMOS FET | N-Channel laterally-diffused metal-oxide-semiconductor or vertically-diffused metal-oxide-semiconductor transistors suitable for high voltage |
 | N-Channel MOSFET | N-Channel metal-oxide-semiconductor field-effect transistor using either Shichman-Hodges equation or surface-potential-based model |
 | NMOS Capacitor | N-type metal-oxide-semiconductor capacitor (R2024b 이후) |
 | NPN Bipolar Transistor | NPN bipolar transistor using enhanced Ebers-Moll equations |
 | Optocoupler | Behavioral model of optocoupler as LED, current sensor, and controlled current source |
 | P-Channel JFET | P-Channel junction field-effect transistor |
 | P-Channel LDMOS FET | P-Channel laterally-diffused metal-oxide-semiconductor or vertically-diffused metal-oxide-semiconductor transistors suitable for high voltage |
 | P-Channel MOSFET | P-Channel metal-oxide-semiconductor field-effect transistor using either Shichman-Hodges equation or surface-potential-based model |
 | PMOS Capacitor | P-type metal-oxide-semiconductor capacitor (R2024b 이후) |
 | PNP Bipolar Transistor | PNP bipolar transistor using enhanced Ebers-Moll equations |
 | Semiconductor Switch Selector | Controlled semiconductor switch at multiple fidelity levels (R2025a 이후) |
 | SPICE-Imported MOSFET | MOSFET with built-in parts parameterized from SPICE subcircuit |
 | Thyristor | Thyristor using NPN and PNP transistors |
 | Thyristor (Piecewise Linear) | Thyristor |
함수
ee_getEfficiency | Calculate efficiency as function of dissipated power losses |
ee_importDeviceParameters | Hitachi, Infineon 또는 Wolfspeed XML 데이터시트에서 추출한 이상적 반도체 블록 파라미터 가져오기 |
ee_getPowerLossSummary | Calculate dissipated power losses and switching losses |
ee_getPowerLossTimeSeries | Calculate dissipated power losses and switching losses, and return time series data |
ee.spice.semiconductorSubcircuit2lookup | Generate lookup table data for three- or four-terminal device by running SPICE (R2022a 이후) |
ee.spice.diodeSubcircuit2lookup | Generate lookup table data for two-terminal device by running SPICE (R2023a 이후) |
generateSemiconductorSwitchROM | Generate reduced-order model of semiconductor switch subsystem (R2024b 이후) |
generateSemiconductorSubcircuitROM | Generate reduced-order model of semiconductor switch by running SPICE (R2025a 이후) |
도움말 항목
- 반도체 소자를 모델링하기 위한 블록 선택
시뮬레이션 목표를 달성하고 블록을 파라미터화하는 데 필요한 충실도 수준에서 반도체 소자를 모델링하기 위한 블록을 선택합니다.
- Parameterize Blocks from Data Sheets
Overview of techniques used to specify block parameters to match the data from manufacturer data sheets.
- Parameterize Piecewise Linear Diode Model from Data Sheet
Specify block parameters for a Piecewise Linear Diode to match the data from manufacturer data sheets.
- Parameterize Exponential Diode from Data Sheet
Specify block parameters for an Exponential Diode to match the data from manufacturer data sheets.
- Parameterize Exponential Diode from SPICE Netlist
Specify block parameters for an Exponential Diode to match the SPICE netlist data.
- Simulating Thermal Effects in Semiconductors
Simulate generated heat and device temperature by using the thermal ports.
- Plot Basic I-V Characteristics of Semiconductor Blocks
Plot basic I-V characteristics of semiconductor blocks based on block parameter values.
- MOSFET Characteristics Viewer
Verify MOSFET model behavior based on specified parameter values.
추천 예제
Improve Simulation Speed of Power Electronics Systems with Reduced Order Modeling
Enhance the model simulation speed of an electro-thermal DC-DC step-down converter by converting a high-fidelity switch to a reduced order model (ROM) switch. This conversion enables faster design iterations and analysis.
스위칭 오디오 전력 증폭기
이 예제에서는 스위칭 오디오 전력 증폭기 회로를 보여줍니다. 스위칭 소자는 완전히 켜진 상태와 완전히 꺼진 상태에서만 동작하므로, 스위칭 오디오 전력 증폭기가 기존 전력 증폭기보다 효율적입니다. 이 오디오 전력 증폭기는 1MHz 스위칭 주파수를 사용하며, 출력 전압이 2kHz 및 2.5kHz 사인파 입력값을 추종하도록 PI 피드백 제어기를 포함하고 있습니다. 파워 스펙트럼은 스펙트럼 분석기에 플로팅되며, 제어기와 필터 파라미터의 선택에 대한 정보를 나타내는 데 사용할 수 있습니다.
태양광 발전 인버터
단일 단계 태양광 인버터의 효율을 확인합니다.
Protect Components During Fault Using Current Limiter Block
Use a Current Limiter block to protect a resistor from a short circuit or failure of the load.
Configure Current Limiter with Variable Asymmetric Limits
Implement a current limiter device with variable asymmetric limits using the Current Limiter block in Simscape™ Electrical™.
