This model shows a class-E RF amplifier with circuit parameters chosen for an 80m wavelength. Class-E amplifiers achieve high efficiency levels as the MOSFETs never have simultaneously high Vds and Ids. The load network is used to shape the voltage and current waveforms. This model can be used to verify correct operation and to support component selection. Correct operation of the circuit is particularly sensitive to source resistance, R_source. The capacitance parameters for the two MOSFETs are representative for an FQA11N90 device.
The plot below shows the load voltage and the drain-source voltage and current for MOSFET A.